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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2928
DESCRIPTION *With TO-3 package *High breakdown voltage APPLICATIONS *For high voltage,high speed and high power switching applications PINNING(see Fig.2)
PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 800 7 5 7 2.5 80 150 -45~150 UNIT V V V A A A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ; RBE=9 IE=10mA ; IC=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=1200V ;IE=0 VCE=650V ; RBE=9 IC=0.5A ; VCE=5V IC=3A ; VCE=5V 15 7 MIN 800 7
2SC2928
SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO ICEO hFE-1 hFE-2
TYP.
MAX
UNIT V V
1.0 1.5 100 100
V V A A
Switching times ton ts tf Turn-on time Storage time Fall time IC=3.0A; VCC=250V IB1=0.6A ,IB2=-1.5A 1.0 3.0 1.0 s s s
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2928
Fig.2 outline dimensions (unindicated tolerance:0.1mm)
3


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